Current Aspects and Future Perspectives of STT-MRAM

◈ Title : Current Aspects and Future Perspectives of STT-MRAM
◈ Speaker : Lee, Jae-kyu  Ph.D. (Samsung Electronics)
◈ Date & Time : Friday, November 18, 2011 (14:00pm ~ 15:30pm)
◈ Place : LG Research Building, Room #101
◈ Host :  Prof. Bumman Kim (T. 2231)
             BK21 Educational Institute of Future Information Technology
◈ Abstract : As technology nodes shrink dramatically, the development of DRAMs has faced many technical problems and challenges to meet the requirements of cell capacitor and access transistors. Many researchers have made great efforts on those issues and tried to develop novel concepts in memory devices to overcome physical limitations. Among several alternative memory concepts, one of the most promising devices is STT-MRAM (Spin Transfer Torque- Magnetoresistive Random Access Memory) to replace conventional memories due to its speed, cost and data retention. In this talk, I will introduce STT-MRAM as a prominent emerging memory and review STT-MRAM in accordance with the replacement of DRAM and new applications. The basic operation of STT_MRAM will be explained compared to conventional memories such as DRAM and Flash memory. Along with the process integration of STT-MRAM, some design issues are also discussed.