PRAM: Application-Driven Technology and Its Future

▣ Title : PRAM: Application-Driven Technology and Its Future  
▣ Speaker : 하대원 박사 (삼성전자) / Dae won Ha, Ph.D. (Samsung Electronics)
▣ Time : 2012년 5월 4일(금) 오후 2:00~3:30 / pm14:00~15:30, May 4 (Fri)
▣ Place : LG동 강당 (101호) / Room #101, LG Research Bldg.
▣ Hosted by : 이정수 교수 (T. 279-2380) / Prof. Jeong Soo Lee (Tel. 279-2380)   
    BK21 미래정보기술사업단 / BK21 Educational Institute of Future Information Technology
▣ Abstract : 
Recently, great advances in PRAM (Phase-change Random Access Memory) cell technology have been accomplished; scalability down to 3nm [1,2], memory capacity up to 8 Gb [3], 2 bit MLC (Multi-Level Cell) operation [4], and reliabilities [5,6].
In this seminar, the unique features of PRAM will be discussed by comparing its cell operation and array operation with those of a conventional DRAM and NAND flash memory. Then, the recent progress of PRAM will be discussed, mainly focusing on its potential applications to the code storage memory, data storage cache memory, data storage memory, and main memory. Also, the future PRAM research and development direction will be projected.

[1]  J. Liang et al., VLSI Tech, pp. 100-101, 2011
[2]  F. Xiong et al., SCIENCE, Vol. 332, pp. 568-570, Apr 2011.
[3]  Y.D. Choi et al., ISSCC, accepted for publication, 2012.
[4]  G.F. Close et al., VLSI Tech, pp. 202-203, 2011
[5]  A.L. Lacaita et al., IEDM, pp. 157-160, 2007.
[6]  S.J. Ahn et al., IEDM, pp. 295-298, 2011.