[카테고리:] 미분류

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▣ Title : Genetically Engineering Energy Devices
▣ Speaker : 이현정 박사 (한국과학기술연구원) / Hyunjung Yi, Ph.D. (Korea Institute of Science and Technology)
▣ Time : 2012년 4월 27일(금) 오후 2:00~3:30 / pm14:00~15:30, April 27 (Fri)
▣ Place : LG동 강당 (101호) / Room #101, LG Research Bldg.
▣ Hosted by : 김병섭 교수 (T. 279-2382) / Prof. Byung Sub Kim (Tel. 2382)   
    BK21 미래정보기술사업단 / BK21 Educational Institute of Future Information Technology
▣ Abstract : 
Making nanocomposites from combinations of materials each with their own unique functional advantage can often solve issues that cannot be addressed when utilizing only one type of materials. Therefore, controlling nanostructure and nanoarchitecture have become central issues in energy devices such as high-power rechargeable batteries and highly efficient solar cells whose performance requires several different material properties. Biological systems can provide precise control over materials interaction between peptides and other non-biological materials through biological molecular recognition, and the capability of modifying and controlling materials interaction through genetic engineering provides an attractive route to creating new nano-structured hybrid materials systems. In this talk, new approaches to effectively incorporating single-walled carbon nanotubes (SWNTs) into nanostructures will be presented. Genetically engineered M13 virus clones are developed to assemble SWNTs and technically important inorganic materials biomineralized on the protein surfaces of M13 virus to create hybrid nanostructured electrodes for high-power Li-ion batteries and highly efficient dye-sensitized solar cells. The fundamental understanding and new approaches this work presents will provide new insight into designing materials for high performance energy devices.

▣ Title : PRAM: Application-Driven Technology and Its Future  
▣ Speaker : 하대원 박사 (삼성전자) / Dae won Ha, Ph.D. (Samsung Electronics)
▣ Time : 2012년 5월 4일(금) 오후 2:00~3:30 / pm14:00~15:30, May 4 (Fri)
▣ Place : LG동 강당 (101호) / Room #101, LG Research Bldg.
▣ Hosted by : 이정수 교수 (T. 279-2380) / Prof. Jeong Soo Lee (Tel. 279-2380)   
    BK21 미래정보기술사업단 / BK21 Educational Institute of Future Information Technology
▣ Abstract : 
Recently, great advances in PRAM (Phase-change Random Access Memory) cell technology have been accomplished; scalability down to 3nm [1,2], memory capacity up to 8 Gb [3], 2 bit MLC (Multi-Level Cell) operation [4], and reliabilities [5,6].
In this seminar, the unique features of PRAM will be discussed by comparing its cell operation and array operation with those of a conventional DRAM and NAND flash memory. Then, the recent progress of PRAM will be discussed, mainly focusing on its potential applications to the code storage memory, data storage cache memory, data storage memory, and main memory. Also, the future PRAM research and development direction will be projected.

[1]  J. Liang et al., VLSI Tech, pp. 100-101, 2011
[2]  F. Xiong et al., SCIENCE, Vol. 332, pp. 568-570, Apr 2011.
[3]  Y.D. Choi et al., ISSCC, accepted for publication, 2012.
[4]  G.F. Close et al., VLSI Tech, pp. 202-203, 2011
[5]  A.L. Lacaita et al., IEDM, pp. 157-160, 2007.
[6]  S.J. Ahn et al., IEDM, pp. 295-298, 2011.

▣ Title : 항공전자/비행제어 기술발전 방향 / Technical Trend of Avionics & Flight Control   
▣ Speaker : 송찬호 부장 (국방과학연구소) / Chan Ho Song, Ph.D. (Agency for Defense Development)
▣ Time : 2012년 5월 11일(금) 오후 2:00~3:30 / pm14:00~15:30, May 11 (Fri)
▣ Place : LG동 강당 (101호) / Room #101, LG Research Bldg.
▣ Hosted by : 이진수 교수 (T. 279-2230) / Prof. Jin Soo Lee (Tel. 279-2230)   
    BK21 미래정보기술사업단 / BK21 Educational Institute of Future Information Technology
▣Abstract : 항공기, 특히 군용 항공기를 중심으로 항공전자/비행제어 기술에 대한 현황과 발전 방향을 살펴 본다. 
항공기 항공전자/비행제어 기술은 전자 산업과 IT기술의 급속한 성장에 힘입어 놀랍게 발전하고 있다. 항공전자 분야의 핵심기술로는 통합 모듈형 (Integrated modular) 으로의 항전체계 통합기술 (Tecnology of integrated avionics), 조종사-항공기 연동 기술(Human-Computer Interaction), 무인자율화 기술 등을 들 수 있다.
 비행제어 분야는 전자식 비행제어 (Fly-By-Wire) 시스템의 출현으로 비행체 안정성보다는 제어성에 더욱 치중할 수 있게 되면서 다양하게 성능을 발전시켜 가고 있다.
 핵심기술로는 추력편향제어, 고앙각 영역에서의 비행제어, 정적으로 불안정한 비행체에 대한 능동 제어, Active flow Control, Cooperative control, 자동착륙 기술(무인기), 무장발사/기동 최적화 기술 등을 들 수 있으며, 현대제어 이론(비선형 제어, 적응제어, 강인제어 이론 등)의 도움으로 성능을 더욱 향상시키려는 노력이 지속되고 있다.
 이러한 항공전자/비행제어 기술 발전 추세를 살펴보고 국내기술을 발전시키기 위한 로드맵을 제시해 본다.

▣ Title : The Crystal Ball of Technology: towards a roadmap for innovation
▣ Speaker : Kamran Eshraghian (President of iDataMap)  
▣ Time : Friday, September 21, 2012 (2:00pm-3:30pm)
▣ Place : Room #101, LG Research Bldg.
▣ Hosted by : Prof. Young Hwan Kim (Tel. 279-2227)
▣Abstract : The thought provoking possibilities of neuroscientists offering an insight into the fascinating functions of the more recently discovered “mirror neurons” some of which appear to have formed the foundations of human interaction and the learning processes; and then the “adaption principle” that provides a glimpse into the processing capability of the brain in selective tuning of the unwanted encountered in our daily routines, makes all the rights and wrongs of the new frontiers of smart products well worth the effort. This presentation by the way of examples will highlight the evolutionary nature of progress in technology and will highlight the changes that have taken place during the last decade in the market place primarily are driven by innovators. Some focus will be placed upon the panacea for a new model that would facilitate growth between research and educational sectors and business.  Essential attributes of the technology roadmap that span from simple circuit elements through to complex visual computational engines such as those of an insect vision and then possibilities in the deployment of “mirror neurons” will be explored, thus providing the rational as to why we need innovators in business.
  Prof. Kamran Eshraghian is very well known as the co-author of the best-seller textbook, “Principles of CMOS VLSI Design: a systems perspective”, used by over 800 universities.
 He is also world-famous for his top-notch speeches to inspire creative minds into young students.

▣ Title : Design Techniques for Dense Embedded Memory in Advanced CMOS Technologies

▣ Abstract : On-die cache memory is a key component in advanced processors since it can boost micro-architectural level performance at a moderate static power penalty. Demand for denser memories only going to increase as the number of cores in a microprocessor goes up with technology scaling. 6T SRAMs have been the embedded memory of choice for modern microprocessors due to their logic compatibility, high speed, and refresh-free operation. However, the relatively large cell size and ratioed operation make aggressive scaling of 6T SRAMs challenging in sub-22 nm. Recently, 1T1C embedded DRAMs (eDRAMs) have replaced SRAMs in several server applications reducing the footprint and improving performance. Difficulties in scaling the storage capacitor and the additional process steps involved in manufacturing the thick oxide (TOX) access devices are currently limiting the wide spread adoption of 1T1C technology.

In this talk, circuit techniques and simulation methodologies are presented to demonstrate the potential of alternative options of gain cell (2T/3T) eDRAMs and spin-torque-transfer magnetic RAMs (STT-MRAMs) for high density embedded memories. Three unique test chips of gain cell eDRAMs achieve overall faster system performances and lower static power dissipations than SRAMs in a generic 65 nm low-power (LP) CMOS process. Studies based on the proposed STT-MRAM simulation methodology show that in-plane STT-MRAMs will outperform SRAMs from 15 nm node, while its perpendicular counterpart requires further innovations in MTJ material properties in order to overcome the poor write performance from 22 nm node.

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