Recent Advances in PRAM Technology:
Operation and Reliability
-. 연 사 : 하 대 원 박사 (삼성전자 메모리사업부)
-. 일 시 : 2009년 5월 29일 (금) 오후 2:45 ~ 4:15
-. 장 소 : LG동 강당
-. 초청자 : 이 정 수 교수 (T.2380)
Abstract
Nonvolatile memory market such as NAND and NOR flash memory has been rapidly growing with the advent of mobile era in the past few years. However, conventional nonvolatile memory technologies are facing severe technology barriers to keep up with the past trend of higher memory density, better performance, and lower cost-per-bit. Recently, various new nonvolatile memories have been investigated to overcome the difficulties of conventional nonvolatile memories and provide ideal memory functions such as non-volatility, fast random accessibility and virtually unlimited usage. PRAM is one of the most promising candidates, considering scalability, cost-per-bit, manufacturability, performance, and high density memory realization. PRAM has many strong points over conventional flash memories. For example, erase operation is not necessary, which re-sults in fast, simple and efficient data processing compared to flash memories. In addition, better write programming endurance reduces software overhead costs such as wear leveling. Furthermore, PRAM can be easily merged with logic technologies with minimized additional photo-mask steps, thus having a great opportunity in embedded memory applications.